BT152-600R NXP Semiconductors, BT152-600R Datasheet - Page 4

• Manufacturer Part Number: BT152-600R
• Description: Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

NXP Semiconductors
March 1997
Thyristors
25
20
15
10
Fig.2. Maximum permissible non-repetitive peak
Fig.1. Maximum on-state dissipation, P
5
0
Fig.3. Maximum permissible rms current I
25
20
15
10
5
0
0
on-state current I
-50
1000
Ptot / W
100
IT(RMS) / A
conduction
angle
degrees
10
10us
versus mounting base temperature T
30
60
90
120
180
average on-state current, I
ITSM / A
I
T
Tj initial = 25 C max
dI /dt limit
form
factor
sinusoidal currents, t
T
a = form factor = I
4
2.8
2.2
1.9
1.57
a
T
0
I TSM
time
5
4
100us
TSM
2.8
IT(AV) / A
BT152
, versus pulse width t
BT152
Tmb / C
BT152
50
T / s
2.2
T(RMS)
10
p
1ms
1.9
≤ 10ms.
T(AV)
/ I
T(AV)
100
, where
Tmb(max) / C
103 C
.
a = 1.57
tot
, versus
mb
T(RMS)
p
, for
10ms
.
15
97.5
103
108.5
114
119.5
125
150
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
250
200
150
100
1.6
1.4
1.2
0.8
0.6
0.4
50
50
40
30
20
10
0
1
(T
0
0.01
-50
1
ITSM / A
VGT(25 C)
IT(RMS) / A
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
BT151
BT152
BT152
Tj / C
50
mb
I
Tj initial = 25 C max
T
100
Product specification
1
≤ 103˚C.
BT152 series
T
100
I TSM
time
Rev 1.200
1000
150
10
j
.