BT300S-600R NXP Semiconductors, BT300S-600R Datasheet - Page 4

• Manufacturer Part Number: BT300S-600R
• Description: Passivated thyristors in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

September 1997
Thyristors
8
6
4
2
0
Fig.2. Maximum permissible non-repetitive peak
Fig.1. Maximum on-state dissipation, P
Fig.3. Maximum permissible rms current I
9
8
7
6
5
4
3
2
1
0
-50
0
on-state current I
Semiconductors
1000
Ptot / W
IT(RMS) / A
100
10
conduction
angle
degrees
10us
versus mounting base temperature T
30
60
90
120
180
average on-state current, I
ITSM / A
I
T
Tj initial = 25 C max
1
dI /dt limit
sinusoidal currents, t
form
factor
T
a = form factor = I
4
2.8
2.2
1.9
1.57
a
T
0
I TSM
4
time
2
100us
TSM
2.8
IT(AV) / A
BT300
, versus pulse width t
BT300S
Tmb / C
3
50
BT300
T / s
2.2
T(RMS)
4
p
1.9
1ms
≤ 10ms.
T(AV)
/ I
100
T(AV)
Tmb(max) / C
, where
5
.
a = 1.57
107 C
tot
, versus
mb
T(RMS)
p
, for
10ms
.
6
111
114.5
118
121.5
125
150
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
1.6
1.4
1.2
0.8
0.6
0.4
70
60
50
40
30
20
10
24
20
16
12
0
1
(T
0.01
8
4
0
-50
1
ITSM / A
VGT(25 C)
IT(RMS) / A
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
10
0.1
surge duration / s
, versus number of cycles, for
BT300
BT151
BT150
Tj / C
50
I
mb
Tj initial = 25 C max
T
100
BT300S series
1
Product specification
≤ 107˚C.
T
BT300M series
100
I TSM
time
Rev 1.100
1000
150
10
j
.