CGD1040HI NXP Semiconductors, CGD1040HI Datasheet

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CGD1040HI

Manufacturer Part Number
CGD1040HI
Description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 VDC
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
CGD1040HI
Manufacturer:
NXP
Quantity:
5 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
Bandwidth 40 MHz to 1003 MHz; V
specified.
[1]
[2]
Symbol Parameter
G
CTB
CCN
I
tot
p
CGD1040HI
1 GHz, 20 dB gain GaAs high output power doubler
Rev. 01 — 22 September 2009
Excellent linearity
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
Integrated ring wave surge protection
CATV systems operating in the 40 MHz to 1003 MHz frequency range
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] ( 6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
Direct Current (DC).
power gain
composite triple beat
carrier-to-composite noise V
total current
Quick reference data
B
= 24 V (DC); Z
Conditions
f = 50 MHz
f = 1003 MHz
V
o
o
= 56.4 dBmV at 1003 MHz
= 56.4 dBmV at 1003 MHz
S
= Z
L
= 75 ; T
mb
= 35 C; unless otherwise
[1]
[1]
[2]
Product data sheet
Min Typ Max Unit
-
19.5 20.8 22.0 dB
-
57
-
20
63
440
74
-
-
460
64
dB
dBc
dBc
mA

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CGD1040HI Summary of contents

Page 1

... CGD1040HI 1 GHz gain GaAs high output power doubler Rev. 01 — 22 September 2009 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. ...

Page 2

... Limiting values supply voltage RF input voltage electrostatic discharge voltage storage temperature mounting base temperature Rev. 01 — 22 September 2009 CGD1040HI Simplified outline Graphic symbol 6-32 UNC and 2 extra Conditions single tone [1] Human Body Model (HBM) ...

Page 3

... MHz V = 56.4 dBmV at 1003 MHz o = 56.4 dBmV at 1003 MHz 56.4 dBmV at 1003 MHz 56.4 dBmV at 1003 MHz 58.4 dBmV at 1003 MHz o = 58.4 dBmV at 1003 MHz 58.4 dBmV at 1003 MHz o Rev. 01 — 22 September 2009 CGD1040HI = 35 C; unless otherwise specified. Min Typ - 20 19.5 20.8 [1] 0 ...

Page 4

... scale max. max. min. max. 4.15 2.4 38.1 25.4 10.2 4.2 44.75 3.85 REFERENCES JEDEC JEITA Rev. 01 — 22 September 2009 CGD1040HI 8.2 6-32 44.25 7.8 UNC ...

Page 5

... GHz gain GaAs high output power doubler Abbreviations Description Community Antenna TeleVision ElectroStatic Discharge Gallium-Arsenide National Television Standard Committee Radio Frequency UNified Coarse Data sheet status Product data sheet Rev. 01 — 22 September 2009 CGD1040HI Change notice Supersedes - - © NXP B.V. 2009. All rights reserved ...

Page 6

... Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 9.4 Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 22 September 2009 CGD1040HI Trademarks © NXP B.V. 2009. All rights reserved ...

Page 7

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com CGD1040HI All rights reserved. Date of release: 22 September 2009 Document identifier: CGD1040HI_1 ...

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