CGY1047 NXP Semiconductors, CGY1047 Datasheet - Page 2

• Manufacturer Part Number: CGY1047
• Description: Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
CGY1047
Product data sheet
Table 2.
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Pin
1
2, 3
5
7, 8
9
Type number
Symbol Parameter
V
V
T
CGY1047
V
T
stg
mb
B
i(RF)
ESD
The value of 2000 V corresponds to a class 2 classification.
supply voltage
RF input voltage
electrostatic discharge voltage
storage temperature
mounting base temperature
Pinning
Ordering information
Limiting values
input
common
+V
output
Description
common
All information provided in this document is subject to legal disclaimers.
B
Package
Name
-
Rev. 2 — 29 September 2010
Description
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2  6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Conditions
single tone
Human Body Model (HBM);
According JEDEC standard
22-A114E
Biased; According
IEC61000-4-2
1 GHz, 27 dB gain GaAs push-pull amplifier
Simplified outline
1 3 5 7
9
[1]
CGY1047
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Min Max
-
-
-
-
40 +100 C
20 +100 C
1
2 3 7 8
30
75
2000 V
2000 V
Version
SOT115J
5
sym095
Unit
V
dBmV
9
2 of 8