TDA1517ATW NXP Semiconductors, TDA1517ATW Datasheet - Page 6

• Manufacturer Part Number: TDA1517ATW
• Manufacturer: NXP Semiconductors

NXP Semiconductors
AC CHARACTERISTICS
V
2001 Apr 17
SE application; note 1
P
THD
f
f
G
⎪ΔG
SVRR
⎪Z
V
α
V
BTL application; note 8
P
THD
f
f
G
SVRR
⎪Z
V
V
P
ro(L)
ro(H)
ro(L)
ro(H)
SYMBOL
cs
o
n(o)(rms)
o(mote)
O
n(o)(rms)
o(mute)
8 W BTL or 2 × 4 W SE power amplifier
V
V
= 12 V; f = 1 kHz; T
i
i
⎪
⎪
V
⎪
output power
total harmonic distortion
low frequency roll-off
high frequency roll off
voltage gain
channel balance
supply voltage ripple rejection
input impedance
noise output voltage (RMS value)
channel separation
output voltage in mute
output power
total harmonic distortion
low frequency roll-off
high frequency roll off
voltage gain
supply voltage ripple rejection
input impedance
noise output voltage (RMS value)
output voltage in mute
amb
PARAMETER
= 25 °C; unless otherwise specified.
note 2
P
−1 dB; note 3
−1 dB
note 4
note 5
R
note 7
note 2
P
−1 dB; note 3
−1 dB
note 4
note 5
on; R
on; R
mute; note 6
note 7
o
o
S
THD = 1%
THD = 10%
on
mute
standby
on; R
on; R
mute; note 6
THD = 1%
THD = 10%
on
mute
standby
= 1 W
= 1 W
= 10 kΩ
6
S
S
CONDITIONS
= 0 Ω
= 10 kΩ
S
S
= 0 Ω
= 10 kΩ
2.5
3
−
−
20
19
−
46
46
80
50
−
−
−
40
−
5
6.5
−
−
20
25
50
50
80
25
−
−
−
−
MIN.
60
30
3.3
4
0.1
25
−
20
−
−
−
−
50
70
50
55
−
6.6
8.0
0.03
25
−
26
−
−
−
70
100
60
−
TYP.
TDA1517ATW
Product specification
−
−
−
−
−
21
1
−
−
−
75
−
100
−
−
2
−
−
−
−
−
27
−
−
−
38
−
200
−
2
MAX.
W
W
%
Hz
kHz
dB
dB
dB
dB
dB
kΩ
μV
μV
μV
dB
mV
W
W
%
Hz
kHz
dB
dB
dB
dB
kΩ
μV
μV
μV
mV
UNIT