TDA8552T_TS NXP Semiconductors, TDA8552T_TS Datasheet - Page 13

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TDA8552T_TS

Manufacturer Part Number
TDA8552T_TS
Description
The TDA8552T is a two channel audio power amplifier thatprovides an output power of 2 x 1
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
AC CHARACTERISTICS (FOR HEADPHONE; R
V
(maximum gain = 20 dB); according to Fig.4.
Notes
1. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted),
2. Supply voltage ripple rejection is measured at the output, with a source impedance of R
2002 Jan 04
handbook, full pagewidth
P
THD
V
SVRR
V
α
DD
cs
o
o(n)
i(max)
2 x 1.4 W BTL audio amplifiers with digital
volume control and headphone sensing
The rise time (t
R
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the
positive supply rail, gain select pin is LOW (0 V).
SYMBOL
= 5 V; T
source
V UP/DOWN
= 0 Ω, gain select pin is LOW (0 V).
amb
V th(DOWN)
V float(max)
V float(min)
r
) of the pulse may have any value.
V th(UP)
= 25 °C; f = 1 kHz; total gain setting at 20 dB; V
V DD
output power
total harmonic distortion
noise output voltage
supply voltage ripple
rejection
maximum input voltage
channel separation
0
PARAMETER
t r
t rep
Fig.3 Timing UP/DOWN pin.
THD = 1%;
THD = 10%; V
THD = 10%; V
THD = 0.5%; V
THD = 0.5%; V
P
note 1
note 2
G
o
v
L
= 60 mW
= −50 to 0 dB
t
= 32 Ω; CONNECTED SE)
CONDITIONS
t w
decreasing volume
13
increasing volume
DD
DD
DD
DD
MODE
floating
= 3.3 V −
= 5.0 V −
= 3.3 V −
= 5.0 V −
= 0 V; gain select pin is 0 V
t r
50
50
MIN.
TDA8552T; TDA8552TS
t rep
35
90
25
60
0.04
60
55
TYP.
source
t w
100
1.75
= 0 Ω at the input.
Product specification
MAX.
MGM611
mW
mW
mW
mW
%
μV
dB
V
dB
UNIT

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