BAP63-05W NXP Semiconductors, BAP63-05W Datasheet - Page 4

• Manufacturer Part Number: BAP63-05W
• Description: Two planar PIN diodes in common cathode configuration
• Manufacturer: NXP Semiconductors

NXP Semiconductors
GRAPHICAL DATA
2001 May 18
handbook, halfpage
handbook, halfpage
Silicon PIN diode
|
f = 100 MHz; T
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T
Fig.4
s 21
(dB)
Fig.2
amb
(1) I
(2) I
−0.1
−0.2
−0.3
−0.4
−0.5
(Ω)
10
r D
|
2
= 25 C.
10
−1
0
10
1
F
F
0
−1
= 100 mA.
= 10 mA.
Insertion loss (s
as a function of frequency; typical values.
Forward resistance as a function of
forward current; typical values.
j
= 25 C.
(1)
(2)
1
1
(3) I
(4) I
(3)
(4)
21
F
F
= 0.5 mA.
= 1 mA.

2
) of the diode in on-state
10
2
f (GHz)
I F (mA)
MGW134
MGW126
10
3
2
4
handbook, halfpage
handbook, halfpage
Fig.5
|
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
s 21
(fF)
(dB)
C d
amb
−10
−20
−30
−40
500
400
300
200
100
|
2
= 25 C.
0
0
0
0
Isolation (s
function of frequency; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 C.
4
21
1

2
) of the diode in off-state as a
8
12
2
BAP63-05W
Product specification
f (GHz)
16
V R (V)
MGW135
MGW133
20
3