1PS66SB82_1PS88SB82 NXP Semiconductors, 1PS66SB82_1PS88SB82 Datasheet - Page 4

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1PS66SB82_1PS88SB82

Manufacturer Part Number
1PS66SB82_1PS88SB82
Description
Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plasticpackages
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
1PS66SB82_1PS88SB82_4
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
(Ω)
I
r
10
10
10
10
F
dif
10
10
1
1
3
2
3
2
10
Forward current as a function of forward
voltage; typical values
f = 1 kHz; T
function of forward current; typical values
0
Differential diode forward resistance as a
amb
amb
amb
−1
(2)
(1)
= 125 °C
= 85 °C
= 25 °C
(3)
0.4
amb
1
= 25 °C
0.8
10
(1)
1.2
I
(2)
F
(mA)
V
F
mgt838
mld549
(V)
(3)
Rev. 04 — 13 January 2010
10
1.6
2
Fig 2.
Fig 4.
1PS66SB82; 1PS88SB82
(μA)
(1) T
(2) T
(3) T
(pF)
10
10
I
C
10
R
10
1.2
0.8
0.6
0.4
d
10
−1
−2
1
0
1
3
2
0
0
Reverse current as a function of reverse
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
15 V, 30 mA low C
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
(1)
(2)
(3)
2
amb
5
= 25 °C
4
d
Schottky barrier diodes
6
10
© NXP B.V. 2010. All rights reserved.
V
8
R
V
(V)
R
mld550
mld551
(V)
15
10
4 of 10

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