BYC10D-600 NXP Semiconductors, BYC10D-600 Datasheet - Page 5

Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package

BYC10D-600

Manufacturer Part Number
BYC10D-600
Description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
6. Characteristics
Table 6.
BYC10D-600
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
t
I
V
R
rr
RM
Fig 5.
F
FR
(A)
I
F
20
16
12
8
4
0
voltage
Forward current as a function of forward
0
Characteristics
Parameter
forward voltage
reverse current
reverse recovery time
peak reverse recovery
current
forward recovery voltage
1
(1)
(2)
2
V
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F
003aag300
(V)
(3)
Conditions
I
I
I
V
V
I
T
I
T
I
T
I
T
I
see
F
F
F
F
F
F
F
F
j
j
j
j
R
R
= 20 A; T
= 10 A; T
= 10 A; T
= 1 A; V
= 10 A; V
= 10 A; V
= 10 A; V
= 10 A; dI
= 25 °C; see
= 25 °C; see
= 125 °C; see
= 100 °C; see
= 600 V
= 500 V; T
Figure 7
3
Rev. 1 — 28 June 2011
R
j
j
j
R
R
R
F
= 30 V; dI
= 150 °C; see
= 25 °C; see
= 150 °C; see
/dt = 100 A/µs; T
= 400 V; dI
= 400 V; dI
= 400 V; dI
j
= 100 °C
Figure 6
Figure 6
Figure 6
Figure 6
Fig 6.
I
I
R
F
F
/dt = 50 A/µs;
F
F
F
/dt = 500 A/µs;
/dt = 50 A/µs;
/dt = 500 A/µs;
Figure 5
Reverse recovery definitions; ramp recovery
Figure 5
Figure 5
j
dl
dt
= 25 °C;
F
I
RM
Q
r
t
rr
Min
-
-
-
-
-
-
-
-
-
-
BYC10D-600
Hyperfast power diode
Typ
1.7
2
1.4
9
1.1
15
18
3
9.5
8
© NXP B.V. 2011. All rights reserved.
Max
2.2
2.5
1.8
200
3
30
-
7.5
12
11
25 %
003aac562
time
Unit
V
V
V
µA
mA
ns
ns
A
A
V
100 %
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