BYQ28E-200 NXP Semiconductors, BYQ28E-200 Datasheet - Page 5
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BYQ28E-200
Manufacturer Part Number
BYQ28E-200
Description
Manufacturer
NXP Semiconductors
Datasheet
1.BYQ28E-200.pdf
(10 pages)
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NXP Semiconductors
BYQ28_SER_E_ED_4
Product data sheet
Fig 3. Reverse recovery definitions
Fig 5. Forward power dissipation as a function of
I
I
R
F
P
(W)
tot
8
6
4
2
0
I
average forward current; square waveform;
maximum values
F(AV)
0
dl
dt
= I
F
F(RMS)
I
RM
Q
2
0.1
r
0.2
t
rr
4
0.5
6
I
F(AV)
001aag976
= 1
(A)
Rev. 04 — 5 December 2007
001aab911
10 %
8
time
100 %
Fig 4. Forward recovery definitions
Fig 6. Forward power dissipation as a function of
V
I
F
F
P
(W)
BYQ28 series E and ED
tot
6
4
2
0
a = form factor = I
average forward current; sinusoidal waveform;
maximum values
0
4.0
Rectifier diodes ultrafast, rugged
2
F(RMS)
2.8
2.2
/ I
F(AV)
1.9
4
a = 1.57
I
F(AV)
© NXP B.V. 2007. All rights reserved.
001aag977
(A)
V
F
6
001aab912
time
time
5 of 10
V
FR