BYR29-600 NXP Semiconductors, BYR29-600 Datasheet - Page 3

• Manufacturer Part Number: BYR29-600
• Description: Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
September 1998
Rectifier diodes
ultrafast
j
SYMBOL PARAMETER
V
I
Q
t
I
V
R
rr
rrm
I
= 25 ˚C unless otherwise stated
I
F
fr
R
V F
s
F
I
F
Fig.1. Definition of t
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
I
rrm
Fig.2. Definition of V
dI
dt
Q
F
s
t
rr
rr
, Q
s
and I
fr
V F
10%
rrm
time
time
CONDITIONS
I
I
V
V
I
dI
I
dI
I
dI
I
F
F
F
F
F
F
time
R
R
F
F
F
= 8 A; T
= 20 A
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
100%
/dt = 20 A/µs
/dt = 100 A/µs
/dt = 50 A/µs; T
= V
= V
V
fr
RRM
RRM
; T
j
2
= 150˚C
F
R
R
j
/dt = 10 A/µs
= 100 ˚C
R
≥ 30 V;
≥ 30 V;
≥ 30 V;
Fig.3. Maximum forward dissipation P
Fig.4. Maximum forward dissipation P
20
15
10
j
5
0
15
10
= 100 ˚C
5
0
0
sinusoidal current waveform where a = form
PF / W
Vo = 1.26 V
Rs = 0.03 Ohms
0
PF / W
Vo = 1.26 V
Rs = 0.03 Ohms
square wave where I
1
2
2
0.1
factor = I
4
4
3
IF(AV) / A
0.2
IF(AV) / A
MIN.
BYR29
BYR29
F(RMS)
6
-
-
-
-
-
-
-
-
4
2.8
F(AV)
I
/ I
5
TYP.
1.07
1.75
150
2.2
1.0
0.1
5.0
8
60
F(AV)
=I
0.5
-
Product specification
BYR29 series
t
p
F(RMS)
T
.
6
1.9
Tmb(max) / C
Tmb(max) / C
10
MAX.
D =
1.50
1.95
200
x √ D.
0.2
10
75
D = 1.0
F
F
a = 1.57
6
-
7
t
T
= f(I
= f(I
p
t
Rev 1.300
12
F(AV)
F(AV)
100
112.5
125
137.5
150
8
120
130
140
150
UNIT
mA
µA
nC
ns
V
V
A
V
);
);