BYT79-600 NXP Semiconductors, BYT79-600 Datasheet - Page 4

• Manufacturer Part Number: BYT79-600
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BYT79-600_1
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
j
Fig 2. Forward current as a function of forward voltage
F
FR
r
= 25 C unless otherwise specified.
(1) T
(2) T
(3) T
j
j
j
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
(A)
I
F
50
40
30
20
10
Conditions
I
I
V
V
I
see
I
dI
I
dI
see
I
see
F
F
F
F
F
F
0
R
R
F
F
= 15 A; T
= 15 A; see
= 2 A to V
= 1 A to V
= 10 A to V
= 10 A; dI
0
/dt = 100 A/ s; see
/dt = 50 A/ s; T
= 600 V
= 600 V; T
Figure 3
Figure 3
Figure 4
Rev. 01 — 16 October 2007
j
F
R
R
= 150 C; see
/dt = 10 A/ s;
R
j
Figure 2
= 100 C
0.6
30 V; dI
30 V;
30 V;
j
= 100 C;
Figure 3
F
/dt = 20 A/ s;
(1)
Figure 2
1.2
(2)
(3)
003aab479
V
F
(V)
1.8
Min
-
-
-
-
-
-
-
-
Typ
1.0
1.17
5
0.2
40
50
3.0
3.2
Rectifier diode ultrafast
BYT79-600
© NXP B.V. 2007. All rights reserved.
Max
1.2
1.38
50
0.8
70
60
5.2
-
Unit
V
V
mA
nC
ns
A
V
A
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