BYV25FD-600 NXP Semiconductors, BYV25FD-600 Datasheet - Page 5

• Manufacturer Part Number: BYV25FD-600
• Description: Enhanced ultrafast power diode in a SOT428 (DPAK) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BYV25FD-600
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
Fig 5.
F
FRM
r
(A)
I
F
20
16
12
8
4
0
voltage
V
(1) T
(2) T
(3) T
Forward current as a function of forward
0
o
Characteristics
= 1.499 V; R
j
j
j
= 150 °C; typical values;
= 150 °C; maximum values;
= 25 °C; maximum values;
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
1
(1)
s
= 0.041 Ω
(2)
2
(3)
Conditions
I
I
V
V
I
T
I
T
I
T
I
see
V
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F
F
F
F
F
F
F
j
j
j
R
R
003aaf445
= 5 A; T
= 5 A; T
= 1 A; V
= 1 A; V
= 1 A; V
= 1 A; dI
= 25 °C; see
= 25 °C; see
= 25 °C; see
(A)
= 600 V; T
= 600 V; T
Figure 7
3
Rev. 02 — 7 March 2011
j
j
R
R
R
F
= 25 °C; see
= 150 °C; see
/dt = 100 A/µs; T
= 30 V; dI
= 30 V; dI
= 30 V; dI
j
j
= 100 °C
= 25 °C
Figure 6
Figure 6
Figure 6
Fig 6.
F
F
F
I
I
/dt = 100 A/µs;
/dt = 100 A/µs;
/dt = 100 A/µs;
R
F
Figure 5
Figure 5
j
= 25 °C;
Reverse recovery definitions; ramp recovery
dl
dt
F
I
RM
Q
r
Enhanced ultrafast power diode
t
rr
BYV25FD-600
Min
-
-
-
-
-
-
-
-
Typ
1.3
1.1
-
-
13
17.5
1.5
3.2
© NXP B.V. 2011. All rights reserved.
Max
1.9
1.7
1.5
50
-
35
-
-
25 %
003aac562
time
Unit
V
V
mA
µA
nC
ns
A
V
100 %
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