BYV29X-600 NXP Semiconductors, BYV29X-600 Datasheet - Page 3

Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package

BYV29X-600

Manufacturer Part Number
BYV29X-600
Description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
5. Thermal characteristics
Table 4.
6. Isolation characteristics
Table 5.
T
BYV29X-600_2
Product data sheet
Symbol
R
R
Symbol
V
C
h
Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width
isol(RMS)
th(j-h)
th(j-a)
isol
= 25 C unless otherwise specified.
Parameter
thermal resistance from junction to heatsink with heatsink compound;
thermal resistance from junction to ambient in free air
Thermal characteristics
Isolation limiting values and characteristics
Parameter
RMS isolation voltage
isolation capacitance
Z
(K/W)
th(j-h)
10
10
10
10
Conditions
from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity
from cathode to external heatsink; f = 1 MHz
1
1
2
3
10
6
10
Rev. 02 — 4 September 2007
5
10
4
Conditions
see
without heatsink compound
10
65 %; clean and dust free
3
Figure 1
10
P
2
10
t
p
1
T
001aaf257
1
t
=
p
(s)
T
t
p
t
10
Min
-
-
-
Min
-
-
BYV29X-600
Rectifier diode ultrafast
Typ
-
-
55
Typ
-
10
© NXP B.V. 2007. All rights reserved.
Max
5.5
5.9
-
Max
2500
-
Unit
K/W
K/W
K/W
Unit
V
pF
3 of 10

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