BYV79E-200 NXP Semiconductors, BYV79E-200 Datasheet - Page 4

• Manufacturer Part Number: BYV79E-200
• Description: Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
July 1998
Rectifier diodes
ultrafast, rugged
I
I
R
V F
F
I
F
Voltage Pulse Source
Fig.1. Definition of t
Fig.3. Circuit schematic for t
I
rrm
Fig.2. Definition of V
dI
dt
Q
F
s
R
t
Current
shunt
rr
rr1
, Q
s
D.U.T.
and I
fr
V F
rr2
to ’scope
10%
rrm
time
time
time
100%
V
fr
3
square current waveform where I
Fig.6. Maximum forward dissipation P
Fig.5. Maximum forward dissipation P
15
10
20
15
10
5
0
5
0
sinusoidal current waveform where a = form
0A
0
0.5A
IF
0
IR
PF / W
PF / W
Vo = 0.744 V
Rs = 0.0112 Ohms
Vo = 0.744 V
Rs = 0.0112 Ohms
I
rec
5
0.1
Fig.4. Definition of t
factor = I
= 0.25A
5
0.2
4
10
IF(AV) / A
IF(AV) / A
BYV79
BYV79
F(RMS)
2.8
I = 1A
R
0.5
15
I
2.2
/ I
BYV79E series
Product specification
10
F(AV)
1.9
t
F(AV)
p
rr2
trr2
.
T
Tmb(max) / C
20
Tmb(max) / C
a = 1.57
=I
D = 1.0
D =
F
F
F(RMS)
= f(I
= f(I
t
T
p
t
Rev 1.200
F(AV)
F(AV)
x √ D.
25
15
110
120
130
140
150
120
130
140
150
);
);