BYW29ED-200 NXP Semiconductors, BYW29ED-200 Datasheet - Page 5

• Manufacturer Part Number: BYW29ED-200
• Description: Ultrafast power diode in a SOT428 (DPAK) surface-mountable package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
November 1998
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
30
20
10
100
0.1
0
10
10
1
1
0
1
IF / A
1
trr / ns
Irrm / A
Fig.8. Maximum I
Tj=150 C
Tj=25 C
Fig.7. Maximum t
I
F
0.5
= f(V
typ
F
); parameter T
dIF/dt (A/us)
-dIF/dt (A/us)
IF=1A
VF / V
10
10
rrm
1
rr
IF=10A
at T
IF=10A
at T
j
j
= 25 ˚C.
= 25 ˚C.
1.5
j
max
IF=1A
BYW29
100
100
2
4
Fig.11. Transient thermal impedance; Z
0.001
100
1.0
0.01
10
0.1
10
1.0
1
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
Fig.10. Maximum Q
BYW29EB, BYW29ED series
10us
100us
pulse width, tp (s)
IF=10A
-dIF/dt (A/us)
1ms
2A
1A
5A
10
P
D
10ms 100ms
s
at T
t
p
Product specification
T
j
= 25 ˚C.
D =
PBYL1025
T
t
p
t
1s
th j-mb
Rev 1.300
100
= f(t
10s
p
).