BAT54W NXP Semiconductors, BAT54W Datasheet - Page 4

• Manufacturer Part Number: BAT54W
• Description: Planar Schottky barrier diodesencapsulated in a SOT323 very smallplastic SMD package
• Manufacturer: NXP Semiconductors

Philips Semiconductors
GRAPHICAL DATA
1996 Mar 19
handbook, halfpage
Schottky barrier (double) diodes
(mA)
f = 1 MHz; T
(1) T
(2) T
(3) T
Fig.8
I F
(pF)
10
Fig.6
C d
10
10
10
1
15
10
amb
amb
amb
3
2
1
0
5
0
0
(1)
= 125 C.
= 85 C.
= 25 C.
Diode capacitance as a function of reverse
voltage; typical values.
amb
Forward current as a function of forward
voltage; typical values.
(2)
= 25 C.
(3)
10
0.4
(1)
(2)
0.8
20
(3)
V
V F (V)
R
MSA891
(V)
MSA892
30
1.2
4
handbook, halfpage
I F
I R
(1) T
(2) T
(3) T
( A)
I R
Fig.7
10
10
10
10
amb
amb
amb
1
3
2
1
0
= 125 C.
= 85 C.
= 25 C.
Fig.9 Reverse recovery definitions.
Reverse current as a function of reverse
voltage; typical values.
dI
dt
F
Q
r
10
t f
BAT54W series
20
Product specification
V
R
(1)
(2)
(3)
(V)
MSA893
MRC129 - 1
10%
90%
30
t