BAT54CV NXP Semiconductors, BAT54CV Datasheet - Page 4

• Manufacturer Part Number: BAT54CV
• Description: Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
BAT54CV
Product data sheet
Fig 1.
(mA)
(1) T
(2) T
(3) T
10
I
F
10
10
10
−1
1
3
2
Forward current as a function of forward
voltage; typical values
0
(1)
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
(2)
(3)
0.4
Table 7.
T
[1]
Symbol
Per diode
V
I
C
R
amb
F
d
Pulse test: t
= 25
(1)
°
(2)
C unless otherwise specified.
0.8
Parameter
forward voltage
reverse current
diode capacitance
Characteristics
(3)
p
≤ 300 μs; δ ≤ 0.02.
V
All information provided in this document is subject to legal disclaimers.
F
(V)
msa892
Rev. 3 — 15 November 2010
1.2
Conditions
I
I
I
I
I
V
V
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
= 25 V
= 1 V; f = 1 MHz
Fig 2.
(μA)
(1) T
(2) T
(3) T
10
I
10
10
R
10
−1
1
3
2
0
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
Two Schottky barrier double diodes
10
[1]
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
20
BAT54CV
© NXP B.V. 2010. All rights reserved.
V
R
(1)
(2)
(3)
(V)
Max
240
320
400
500
800
2
10
msa893
30
Unit
mV
mV
mV
mV
mV
μA
pF
4 of 10