BAT54T NXP Semiconductors, BAT54T Datasheet - Page 4
![Single planar Schottky barrier diode with an integrated guard ring for stress protection,encapsulated in a SOT416 (SC-75) ultra small Surface-Mounted Device (SMD) plasticpackage](/photos/41/52/415248/sot416_3d_sml.gif)
BAT54T
Manufacturer Part Number
BAT54T
Description
Single planar Schottky barrier diode with an integrated guard ring for stress protection,encapsulated in a SOT416 (SC-75) ultra small Surface-Mounted Device (SMD) plasticpackage
Manufacturer
NXP Semiconductors
Datasheet
1.BAT54T.pdf
(9 pages)
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NXP Semiconductors
BAT54T_1
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
10
I
F
10
10
10
−1
1
3
2
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
0
(1)
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
(2)
(3)
amb
0.4
= 25 °C
(1)
(2)
0.8
(pF)
(3)
C
15
d
10
0
5
0
V
F
(V)
msa892
Rev. 01 — 14 December 2009
1.2
10
Fig 2.
20
(μA)
(1) T
(2) T
(3) T
10
I
10
R
10
10
−1
1
3
2
0
Reverse current as a function of reverse
voltage; typical values
V
amb
amb
amb
R
(V)
msa891
= 125 °C
= 85 °C
= 25 °C
30
10
Single Schottky barrier diode
20
© NXP B.V. 2009. All rights reserved.
V
R
BAT54T
(1)
(2)
(3)
(V)
msa893
30
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