BAT854W_SERIES NXP Semiconductors, BAT854W_SERIES Datasheet - Page 4

• Manufacturer Part Number: BAT854W_SERIES
• Description: Planar Schottky barrier diodesencapsulated in a SOT323 very smallSMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
GRAPHICAL DATA
2001 Feb 27
handbook, halfpage
handbook, halfpage
Schottky barrier (double) diodes
(1) T
(2) T
(3) T
Fig.6
f = 1 MHz; T
Fig.8
(mA)
(pF)
10
C d
I F
10
10
20
16
12
10
−1
amb
amb
amb
8
4
0
1
3
2
0
0
= 125 °C.
= 85 °C.
= 25 °C.
(1)
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
= 25 °C.
(2)
10
(3)
0.4
20
0.8
30
V F (V)
V R (V)
MLD548
MLD546
1.2
40
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.7
(μA)
10
10
I R
10
10
−1
amb
amb
amb
1
3
2
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
10
(1)
(2)
(3)
20
BAT854W series
30
Product data sheet
V R (V)
MLD547
40