PMEG2005AELD NXP Semiconductors, PMEG2005AELD Datasheet - Page 9

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable

PMEG2005AELD

Manufacturer Part Number
PMEG2005AELD
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD882D leadless ultrasmall Surface-Mounted Device (SMD) plastic package with visible and solderable
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
8. Test information
PMEG2005AELD
Product data sheet
Fig 14. Reverse recovery time test circuit and waveforms
V = V
(1) I
R
S
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
8.1 Quality information
The current ratings for the typical waveforms as shown in
calculated according to the equations:
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
I
Fig 15. Duty cycle definition
RMS
I
F
=
D.U.T.
I
F AV
(
)
at DC, and
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
mga881
SAMPLING
R
i
= 50
Rev. 1 — 10 May 2011
Ω
I
RMS
V
P
R
=
I
M
t
10 %
20 V, 0.5 A low V
r
t
×
1
I
90 %
F AV
(
δ
input signal
t
2
with I
)
t
duty cycle δ =
p
=
I
RMS
M
006aaa812
×
δ
defined as RMS current.
PMEG2005AELD
F
with I
MEGA Schottky barrier rectifier
t
t
t
1
2
Figure
t
M
defined as peak current,
+ I
F
10, 11,
output signal
© NXP B.V. 2011. All rights reserved.
12
t rr
and
13
(1)
are
t
9 of 14

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