PMEG2005EPK NXP Semiconductors, PMEG2005EPK Datasheet - Page 6
![Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderab](/photos/41/52/415251/sod1608_3d_sml.gif)
PMEG2005EPK
Manufacturer Part Number
PMEG2005EPK
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 Surface-Mounted Device (SMD) plastic package with visible and solderab
Manufacturer
NXP Semiconductors
Datasheet
1.PMEG2005EPK.pdf
(13 pages)
NXP Semiconductors
PMEG2005EPK
Product data sheet
Fig 5.
Fig 7.
(pF)
(A)
C
I
10
10
10
10
F
d
10
75
50
25
-1
-2
-3
-4
1
0
0.0
voltage; typical values
voltage; typical values
(1) T
(2) T
(3) T
(4) T
(5) T
Forward current as a function of forward
f = 1 MHz; T
Diode capacitance as a function of reverse
0
(1)
(2)
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(3)
0.2
5
amb
(4)
= 25 °C
(5)
0.4
10
0.6
15
All information provided in this document is subject to legal disclaimers.
006aac943
V
006aac945
V
R
F
(V)
(V)
0.8
Rev. 1 — 12 January 2012
20
Fig 6.
Fig 8.
20 V, 0.5 A low VF MEGA Schottky barrier rectifier
P
(W)
F(AV)
(A)
I
R
0.25
0.20
0.15
0.10
0.05
0.00
10
10
10
10
10
10
10
10
-1
-2
-3
-4
-5
-6
-7
-8
0.00
voltage; typical values
function of average forward current; typical
values
(1) T
(2) T
(3) T
(4) T
Reverse current as a function of reverse
T
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Average forward power dissipation as a
0
j
= 150 °C
j
j
j
j
= 125 °C
= 85 °C
= 25 °C
= −40 °C
5
(1)
0.25
PMEG2005EPK
(2)
10
(1)
(2)
(3)
(4)
0.50
(3)
15
I
F(AV)
© NXP B.V. 2012. All rights reserved.
V
006aac944
006aac946
R
(A)
(V)
(4)
0.75
20
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