PMEG2010AEB NXP Semiconductors, PMEG2010AEB Datasheet - Page 2

• Manufacturer Part Number: PMEG2010AEB
• Description: Planar Maximum Efficiency General Application (MEGA)Schottky barrier rectifier with an integrated guard ring forstress protection, encapsulated in a SOD523 (SC-79) ultrasmall plastic SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
• Forward current: 1.0 A
• Reverse voltage: 20 V
• Ultra low forward voltage
• Ultra small SMD package.
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse-polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small plastic SMD package.
ORDERING INFORMATION
RELATED PRODUCTS
2003 Dec 03
PMEG2010AEB
PMEG2005EB
PMEG2010EA
TYPE NUMBER
20 V, 1 A ultra low V
barrier rectifier in SOD523 package
TYPE
0.5 A; 20 V very low V
1 A; 20 V very low V
NAME
−
F
MEGA Schottky
DESCRIPTION
plastic surface mounted package; 2 leads
F
F
MEGA Schottky rectifier
MEGA Schottky rectifier Lower I
2
QUICK REFERENCE DATA
PINNING
DESCRIPTION
I
V
SYMBOL
F
R
PACKAGE
Marking code: L6.
The marking bar indicates the cathode.
Fig.1
Lower forward current, lower I
(SC76)
Simplified outline (SOD523; SC-79) and
symbol.
PIN
forward current
reverse voltage
1
2
1
Top view
R
PARAMETER
in same package
FEATURE
2
cathode
anode
PMEG2010AEB
col001
DESCRIPTION
Product data sheet
R
1
20
MAX.
SOD323
VERSION
SOD523
A
V
UNIT