PMEG3010BEP NXP Semiconductors, PMEG3010BEP Datasheet - Page 6

• Manufacturer Part Number: PMEG3010BEP
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD128 small and flat leadSurface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMEG3010BEP_1
Product data sheet
Fig 4.
Fig 6.
(A)
I
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
10
F
10
1
1
2
3
4
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
j
j
j
j
j
= 150 C
= 125 C
= 85 C
= 25 C
= 40 C
(1)
(2)
0.1
0.2
amb
(3)
= 25 C
0.3
(4)
(5)
0.4
(pF)
C
350
300
250
200
150
100
d
0.5
50
0
0
006aab461
V
0.6
F
(V)
0.7
Rev. 01 — 20 April 2009
10
Fig 5.
20
(A)
I
10
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
2
3
4
5
6
7
8
9
0
Reverse current as a function of reverse
voltage; typical values
V
1 A low V
j
j
j
j
R
006aab440
= 125 C
= 85 C
= 25 C
= 40 C
(V)
30
F
10
MEGA Schottky barrier rectifier
PMEG3010BEP
(1)
(2)
(3)
(4)
20
© NXP B.V. 2009. All rights reserved.
V
R
006aab439
(V)
30
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