PMEG3020EH_EJ NXP Semiconductors, PMEG3020EH_EJ Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PMEG3020EH_EJ
Manufacturer Part Number
PMEG3020EH_EJ
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with anintegrated guard ring for stress protection encapsulated in small SMD plastic packages
Manufacturer
NXP Semiconductors
Datasheet
1.PMEG3020EH_EJ.pdf
(9 pages)
NXP Semiconductors
7. Characteristics
PMEG3020EH_EJ_4
Product data sheet
Fig 1.
(mA)
I
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
10
10
10
−1
1
4
3
2
0
Forward current as a function of forward
voltage; typical values
amb
amb
amb
amb
amb
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1)
0.1
(2)
0.2
(3)
Table 8.
T
[1]
Symbol
V
I
C
R
amb
F
d
(4)
Pulse test: t
0.3
= 25
(5)
°
C unless otherwise specified.
0.4
Parameter
forward voltage
reverse current
diode capacitance
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
V
F
0.5
006aaa293
(V)
Rev. 04 — 4 February 2010
0.6
PMEG3020EH; PMEG3020EJ
V
Conditions
I
I
I
I
I
I
V
V
F
F
F
F
F
F
R
R
R
30 V, 2 A ultra low V
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 1000 mA
= 2000 mA
= 10 V
= 30 V
= 1 V; f = 1 MHz
Fig 2.
(μA)
I
R
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
10
10
10
−1
−2
1
6
5
4
3
2
0
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
5
(1)
(2)
(3)
(4)
(5)
F
[1]
10
MEGA Schottky barrier rectifiers
Min
-
-
-
-
-
-
-
-
-
15
20
Typ
125
185
255
330
400
510
60
400
60
25
© NXP B.V. 2010. All rights reserved.
V
R
006aaa294
30
(V)
Max
160
220
290
380
480
620
150
1000
72
35
Unit
mV
mV
mV
mV
mV
mV
μA
μA
pF
4 of 9