BAS21AVD NXP Semiconductors, BAS21AVD Datasheet - Page 4

• Manufacturer Part Number: BAS21AVD
• Description: Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74) smallSurface-Mounted Device (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BAS21AVD
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
(1) V
(2) V
600
400
200
I
F
0
Forward current as a function of forward
voltage
0
Reverse current as a function of junction temperature
j
j
j
R
R
= 150 °C; typical values
= 25 °C; typical values
= 25 °C; maximum values
= V
= V
Rmax
Rmax
; maximum values
; typical values
1
(1)
(μA)
(2)
I
10
10
R
V
10
10
−1
−2
F
2
1
(V)
0
All information provided in this document is subject to legal disclaimers.
(3)
mbg384
Rev. 1 — 10 January 2011
2
(1)
(2)
100
Fig 2.
I
FSM
(A)
T
10
10
j
1
(°C)
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
j
= 25 °C; prior to surge
mbg381
10
200
10
High-voltage switching diodes
2
10
3
BAS21AVD
10
© NXP B.V. 2011. All rights reserved.
4
t
p
mle165
(μA)
10
5
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