BAV102_BAV103 NXP Semiconductors, BAV102_BAV103 Datasheet - Page 5

Single general-purpose switching diodes, fabricated in planar technology, andencapsulated in small hermetically sealed glass SOD80C Surface-MountedDevice (SMD) packages

BAV102_BAV103

Manufacturer Part Number
BAV102_BAV103
Description
Single general-purpose switching diodes, fabricated in planar technology, andencapsulated in small hermetically sealed glass SOD80C Surface-MountedDevice (SMD) packages
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
8. Test information
BAV102_BAV103
Product data sheet
Fig 5.
Fig 7.
(mA)
V = V
(1) I
300
I
200
100
F
R
0
S
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curve
0
Reverse recovery time test circuit and waveforms
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
100
I
F
D.U.T.
T
amb
(°C)
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
mga881
SAMPLING
mbh278
R
i
= 50
200
Rev. 4 — 6 August 2010
Ω
V
R
Fig 6.
t
10 %
r
(V)
V
(1) BAV103
(2) BAV102
90 %
300
200
100
R
0
input signal
0
FR4 PCB, standard footprint
Reverse voltage as a function of ambient
temperature; derating curve
t
Single general-purpose switching diodes
p
(1)
(2)
BAV102; BAV103
t
100
+ I
F
T
amb
output signal
© NXP B.V. 2010. All rights reserved.
(°C)
mgl588
t rr
200
(1)
t
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