BAV756S_BAW56_SER NXP Semiconductors, BAV756S_BAW56_SER Datasheet - Page 7

• Manufacturer Part Number: BAV756S_BAW56_SER
• Description: High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)plastic packages
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BAV756S_BAW56_SER_5
Product data sheet
Fig 5. Reverse recovery time test circuit and waveforms
Fig 6. Forward recovery voltage test circuit and waveforms
(1) I
R
V = V
S
R
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Input signal: forward pulse rise time t
S
R
= 50
R
= 50
= 1 mA
I
I
F
R
S
1 k
D.U.T.
450
I
F
r
= 0.35 ns
D.U.T.
OSCILLOSCOPE
R
i
= 50
r
r
OSCILLOSCOPE
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
mga881
SAMPLING
R
i
Rev. 05 — 26 November 2007
= 50
I
V
R
10 %
t
r
t
10 %
r
90 %
BAV756S; BAW56 series
input signal
90 %
input signal
t
p
t
p
p
p
= 100 ns; duty cycle
100 ns; duty cycle
t
High-speed switching diodes
t
V
I
F
V FR
= 0.05
output signal
0.005
output signal
© NXP B.V. 2007. All rights reserved.
t rr
mga882
(1)
t
t
7 of 15