BAW62 NXP Semiconductors, BAW62 Datasheet - Page 3
![The BAW62 is a high-speed switching diode fabricated in planar technology,and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)package](/photos/41/52/415255/sod027_3d_sml.gif)
BAW62
Manufacturer Part Number
BAW62
Description
The BAW62 is a high-speed switching diode fabricated in planar technology,and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)package
Manufacturer
NXP Semiconductors
Datasheet
1.BAW62.pdf
(9 pages)
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ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 17
V
I
C
t
V
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C; unless otherwise specified.
F
fr
High-speed diode
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
at I
when switched from I
t
R
r
= 20 ns; see Fig.8
I
I
I
V
V
V
V
V
= 10 mA; R
F
F
F
R
R
R
R
R
R
= 5 mA
= 100 mA
= 100 mA; T
= 1 mA; see Fig.7
= 20 V
= 50 V
= 75 V
= 20 V; T
= 75 V; T
lead length 10 mm
lead length 10 mm; note 1
3
CONDITIONS
R
L
= 0; see Fig.6
j
j
= 100 Ω; measured
= 150 °C
= 150 °C
j
= 100 °C
CONDITIONS
F
F
= 10 mA to
= 50 mA;
MIN.
620
−
−
−
−
−
−
−
−
−
−
VALUE
1 000
Product data sheet
MAX.
750
930
200
100
240
500
25
50
5
2
4
2.5
BAW62
mV
mV
mV
nA
nA
μA
μA
μA
pF
ns
V
UNIT
UNIT
K/W
K/W