PMBD7000 NXP Semiconductors, PMBD7000 Datasheet - Page 3

The PMBD7000 consists of two high-speed switching diodes connected in series,fabricated in planar technology, and encapsulated in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package

PMBD7000

Manufacturer Part Number
PMBD7000
Description
The PMBD7000 consists of two high-speed switching diodes connected in series,fabricated in planar technology, and encapsulated in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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5. Limiting values
6. Thermal characteristics
PMBD7000
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 6.
[1]
[2]
Symbol
Per diode
V
V
I
I
I
P
Per device
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
RRM
R
tot
th(j-a)
th(j-t)
Single diode loaded.
Double diode loaded.
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Single diode loaded.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
j
= 25 °C prior to surge.
Limiting values
Thermal characteristics
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 16 September 2010
Conditions
square wave
T
amb
t
t
t
Conditions
in free air
p
p
p
= 1 μs
= 1 ms
= 1 s
≤ 25 °C
Double high-speed switching diode
[1][4]
[1][2]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
−55
−65
Min
-
-
PMBD7000
Typ
-
-
© NXP B.V. 2010. All rights reserved.
Max
100
100
215
125
450
4
1
0.5
250
150
+150
+150
Max
500
360
Unit
V
V
mA
mA
mA
A
A
A
mW
°C
°C
°C
Unit
K/W
K/W
3 of 12

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