PESDXS2UT_SERIES NXP Semiconductors, PESDXS2UT_SERIES Datasheet - Page 2

Uni-directional double ESD protection diodes in a SOT23plastic package

PESDXS2UT_SERIES

Manufacturer Part Number
PESDXS2UT_SERIES
Description
Uni-directional double ESD protection diodes in a SOT23plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: P
• Low clamping voltage: V
• Ultra-low reverse leakage current: I
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); I
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note
1. * = p : made in Hong Kong.
2004 Apr 15
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
Double ESD protection diodes in SOT23
package
* = t : made in Malaysia.
* = W : made in China.
TYPE NUMBER
pp
(CL)R
pp
= 18 A at t
= 330 W at t
= 20 V at I
MARKING CODE
RM
p
< 700 nA
= 8/20 µs.
*U9
*U1
*U2
*U3
*U4
pp
p
= 8/20 µs
= 18 A
(1)
2
QUICK REFERENCE DATA
PINNING
V
C
SYMBOL
RWM
d
Fig.1 Simplified outline (SOT23) and symbol.
PIN
1
2
3
1
2
reverse stand-off
voltage
diode capacitance
V
f = 1 MHz
number of
protected lines
R
PARAMETER
= 0 V;
cathode 1
cathode 2
common anode
001aaa490
PESDxS2UT series
3
DESCRIPTION
3.3, 5.2, 12, 15
and 24
207, 152, 38, 32
and 23
2
1
2
Product data sheet
VALUE
sym022
3
V
pF
UNIT

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