PESD5V0S1BA_BB_BL NXP Semiconductors, PESD5V0S1BA_BB_BL Datasheet - Page 3

• Manufacturer Part Number: PESD5V0S1BA_BB_BL
• Description: Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMDplastic packages designed to protect one signal line from the damage caused by ESD andother transients
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
PESD5V0S1BA_BB_BL_4
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Table 8.
Symbol
Per diode
P
I
T
T
T
Symbol Parameter
ESD
Standard
IEC 61000-4-2, level 4 (ESD);
HBM MIL-STD 883; class 3
PP
j
amb
stg
PP
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see
Figure
Measured from pin 1 to pin 2.
Measured from pin 1 to pin 2.
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
electrostatic discharge
capability
1.
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Rev. 04 — 20 August 2009
Figure 2
Low capacitance bidirectional ESD protection diodes
Conditions
IEC 61000-4-2 (contact
discharge)
HBM MIL-Std 883
Conditions
8/20 s
8/20 s
PESD5V0S1BA/BB/BL
Conditions
15 kV (air);
4 kV
[1][2]
[1][2]
[1][2]
Min
-
-
-
Min
-
-
65
65
8 kV (contact)
Figure
© NXP B.V. 2009. All rights reserved.
Max
130
12
150
Max
30
10
150
150
2.
Unit
W
A
Unit
kV
kV
C
C
C
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