PESD5V0U1UA_UB_UL NXP Semiconductors, PESD5V0U1UA_UB_UL Datasheet - Page 4

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PESD5V0U1UA_UB_UL

Manufacturer Part Number
PESD5V0U1UA_UB_UL
Description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes insmall Surface-Mounted Device (SMD) plastic packages designed to protect one signalline from the damage caused by ESD and other transients
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
6. Characteristics
PESD5V0U1UA_UB_UL_1
Product data sheet
Fig 2.
(pF)
C
d
2.0
1.9
1.8
1.7
1.6
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
1
amb
Table 9.
T
= 25 C
Symbol
V
I
V
C
r
RM
amb
dif
2
RWM
BR
d
= 25 C unless otherwise specified.
3
Characteristics
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
differential resistance
4
006aab348
V
R
(V)
Rev. 01 — 30 October 2008
5
Ultra low capacitance unidirectional ESD protection diodes
Fig 3.
Conditions
V
I
f = 1 MHz
I
R
R
RWM
V
V
= 5 mA
= 1 mA
V
R
R
CL
PESD5V0U1UA/UB/UL
= 0 V
= 5 V
V-I characteristics for a unidirectional
ESD protection diode
= 5 V
V
BR
V
RWM
P-N
+
Min
-
-
5.8
-
-
-
I
Typ
-
1
6.8
2
1.7
-
I
I
I
RM
R
PP
© NXP B.V. 2008. All rights reserved.
Max
5
100
8.8
2.6
2.3
100
006aaa407
Unit
V
nA
V
pF
pF
V
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