PESD1LIN NXP Semiconductors, PESD1LIN Datasheet - Page 4

• Manufacturer Part Number: PESD1LIN
• Description: PESD1LIN in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plasticpackage designed to protect one automotive Local Interconnect Network (LIN) bus linefrom the damage caused by ElectroStatic Discharge (ESD) and other transients
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
PESD1LIN
Product data sheet
Fig 3.
P
(W)
PP
10
10
10
10
4
3
2
1
T
pulse duration; typical values
Peak pulse power as a function of exponential
amb
= 25 C
10
Table 8.
T
[1]
Symbol
V
I
V
C
V
r
RM
dif
amb
RWM
BR
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
10
= 25
2

C unless otherwise specified.
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
PESD1LIN (15 V)
PESD1LIN (24 V)
10
3
All information provided in this document is subject to legal disclaimers.
006aaa164
t
p
(μs)
10
4
Rev. 3 — 31 May 2011
V
V
I
V
I
I
I
I
Conditions
I
I
Fig 4.
R
PP
PP
PP
PP
R
R
RWM
RWM
R
P
= 5 mA
= 1 mA
= 1 mA
PP(25°C)
= 0 V; f = 1 MHz
= 1 A
= 5 A
= 1 A
= 3 A
P
PP
= 15 V
= 24 V
1.2
0.8
0.4
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
50
[1]
LIN-bus ESD protection diode
Min
-
-
-
-
17.1
25.4
-
-
-
-
-
-
-
100
Typ
-
-
< 1
< 1
18.9
27.8
13
-
-
-
-
-
-
PESD1LIN
150
© NXP B.V. 2011. All rights reserved.
001aaa193
T
j
Max
15
24
50
50
20.3
30.3
17
25
44
40
70
225
300
(°C)
200
V
V
V
V
Unit
nA
nA
pF
V
V
V
V


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