BUK6246-75C NXP Semiconductors, BUK6246-75C Datasheet - Page 5

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology

BUK6246-75C

Manufacturer Part Number
BUK6246-75C
Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK6246-75C
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
10
10
th(j-mb)
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance from
junction to mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Conditions
see
Rev. 1 — 13 July 2011
Figure 4
10
-3
N-channel TrenchMOS intermediate level FET
10
-2
BUK6246-75C
Min
-
10
P
-1
Typ
-
t
p
tp (s)
T
© NXP B.V. 2011. All rights reserved.
003aae881
δ =
Max
2.52
T
t
p
t
1
Unit
K/W
5 of 14

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