BUK7210-55B NXP Semiconductors, BUK7210-55B Datasheet - Page 6
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology](/photos/41/50/415037/sot428_3d_sml.gif)
BUK7210-55B
Manufacturer Part Number
BUK7210-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7210-55B.pdf
(14 pages)
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6. Characteristics
Table 6.
BUK7210-55B_1
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
Figure 7
I
Figure
I
Figure 7
I
Figure 7
I
Figure 7
V
V
V
V
V
V
V
Figure 9
V
Figure
I
T
V
T
V
R
measured from drain to center of die;
T
measured from source lead to source
bond pad; T
D
D
D
D
D
D
D
D
j
j
j
DS
DS
DS
DS
DS
DS
GS
GS
GS
DS
G(ext)
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 °C; see
= 25 °C; see
= 25 °C
= 55 V; V
= 55 V; V
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
= 25 V; R
= 10 V; I
= 10 V; I
= 0 V; V
= 10 Ω; T
7; see
10; see
Rev. 01 — 11 December 2008
DS
j
DS
DS
DS
DS
DS
GS
GS
DS
D
D
= 25 °C
Figure 8
GS
GS
GS
GS
L
GS
GS
= 25 A; T
= 25 A; T
= 44 V; V
Figure 9
= V
= V
= V
= V
= V
Figure
Figure 14
= 1.2 Ω; V
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
GS
GS
; T
; T
; T
; T
; T
12; see
j
j
j
j
j
j
j
GS
j
j
j
j
j
= 175 °C; see
= 25 °C; see
= 185 °C; see
= -40 °C; see
= -55 °C; see
= 185 °C; see
= 25 °C; see
j
j
j
GS
= 175 °C
= 125 °C
= 25 °C
= 185 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 10 V;
Figure 13
N-channel TrenchMOS standard level FET
Min
55
50
-
2
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK7210-55B
Typ
-
-
1.75
3
-
2.8
-
1.5
0.1
0.02
3
2
2
-
8.5
35
9
12
1840
379
165
18
91
48
45
2.5
7.5
© NXP B.V. 2008. All rights reserved.
Max
-
-
-
4
-
-
4.4
500
90
1
800
100
100
20.8
10
-
-
-
2453
455
226
-
-
-
-
-
-
Unit
V
V
V
V
V
V
V
µA
µA
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
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