BUK7225-55A NXP Semiconductors, BUK7225-55A Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7225-55A

Manufacturer Part Number
BUK7225-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7225-55A
Manufacturer:
NXP
Quantity:
60 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7225-55A
N-channel TrenchMOS standard level FET
Rev. 2 — 23 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
see
V
T
see
I
R
T
D
j
mb
j
j
j(init)
GS
GS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
= 43 A; V
Figure
Figure 13
Figure 13
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
mb
GS
= 25 A;
= 25 A;
≤ 55 V;
Figure
= 25 °C;
Figure
= 10 V;
Figure 2
Figure 3
12;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
12;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
21
-
Max Unit
55
43
94
50
25
123
V
A
W
mΩ
mΩ
mJ

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BUK7225-55A Summary of contents

Page 1

... BUK7225-55A N-channel TrenchMOS standard level FET Rev. 2 — 23 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A Graphic symbol mbb076 Version SOT428 Min Max - -20 20 Figure 1; ...

Page 3

... I DSon δ D. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A N-channel TrenchMOS standard level FET 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03ne70 = 10 μs ...

Page 4

... BUK7225-55A Product data sheet Conditions see Figure 4 minimum footprint; FR4 board Single Shot −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A N-channel TrenchMOS standard level FET Min Typ - - - 71.4 03ne71 t p δ ...

Page 5

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A Min Typ Max Unit 4 ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A N-channel TrenchMOS standard level FET 35 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 7

... Fig 10. Gate-source voltage as a function of turn-on 03aa32 R (mΩ) 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A N-channel TrenchMOS standard level FET ...

Page 8

... Fig 14. Input and reverse transfer capacitances as a 120 I S (A) 100 80 = 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of gate-source voltage; typical values 03nb66 = 25 ° ...

Page 9

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 10

... BUK7225-55A Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product specification - All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A Supersedes BUK7225_55A-01 - © NXP B.V. 2011. All rights reserved ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 23 February 2011 BUK7225-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 23 February 2011 Document identifier: BUK7225-55A ...

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