BUK7227-100B NXP Semiconductors, BUK7227-100B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7227-100B

Manufacturer Part Number
BUK7227-100B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
BUK7227-100B
N-channel TrenchMOS standard level FET
Rev. 02 — 17 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive systems
Quick reference data
Parameter
drain-source voltage T
drain current
total power
dissipation
drain-source
on-state resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge
Conditions
V
see
T
V
T
see
I
R
T
V
V
see
D
j
mb
j
j(init)
GS
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
= 48 A; V
Figure
Figure 12
Figure 13
= 25 °C; see
= 80 V; T
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 185 °C
j
mb
GS
= 25 °C;
= 25 A;
= 25 A;
≤ 100 V;
Figure
= 25 °C;
= 10 V;
Figure 2
Figure 3
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
General purpose power switching
Motors, lamps and solenoids
11;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
23
-
13
Max Unit
100
48
167
27
145
-
V
A
W
mΩ
mJ
nC

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BUK7227-100B Summary of contents

Page 1

... BUK7227-100B N-channel TrenchMOS standard level FET Rev. 02 — 17 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B Graphic symbol mbb076 Version SOT428 © NXP B.V. 2011. All rights reserved ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET Min - - -20 Figure 1 - Figure 1; - ≤ 10 µ -55 - ° Ω ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7227-100B Product data sheet = All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET 03nl31 = 10 μ 100 μ 100 ms 2 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7227-100B Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET Min Typ - - - 71.4 03nk52 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B Min Typ Max Unit 100 - - 0 ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET 35 DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nl29 105 140 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − ...

Page 9

... 185 ° ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03nl23 0.9 1.2 ...

Page 10

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7227-100B v.2 20110217 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 February 2011 BUK7227-100B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 February 2011 Document identifier: BUK7227-100B ...

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