BUK7523-75A NXP Semiconductors, BUK7523-75A Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7523-75A

Manufacturer Part Number
BUK7523-75A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK7523-75A
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BUK7523-75A
Manufacturer:
NXP
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7523-75A
N-channel TrenchMOS standard level FET
Rev. 2 — 2 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
see
V
T
see
I
R
T
D
j
mb
j
j
j(init)
GS
GS
GS
GS
≥ 25 °C; T
= 175 °C; see
= 25 °C; see
= 49 A; V
Figure
Figure 13
Figure 13
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
mb
GS
= 25 A;
= 25 A;
≤ 75 V;
Figure
= 25 °C;
Figure
= 10 V;
Figure 2
Figure 3
12;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
12;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
17
-
Max Unit
75
53
138
49
23
120
V
A
W
mΩ
mΩ
mJ

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BUK7523-75A Summary of contents

Page 1

... BUK7523-75A N-channel TrenchMOS standard level FET Rev. 2 — 2 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A N-channel TrenchMOS standard level FET Min - - -20 Figure 1; - Figure 1 - ≤ 10 µ -55 - ° Ω ...

Page 4

... T 10 Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A N-channel TrenchMOS standard level FET 03nb23 100 100 (V) DS Min ...

Page 5

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A Min Typ Max Unit 4 ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A N-channel TrenchMOS standard level FET 28 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 7

... R DSon (mΩ 120 180 T (°C) j Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A N-channel TrenchMOS standard level FET gate charge; typical values ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances ( 175 ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nb01 = 25 ° ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK7523-75A separated from data sheet BUK7523_7623_75A-01. Product specification All information provided in this document is subject to legal disclaimers. ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 February 2011 BUK7523-75A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 February 2011 Document identifier: BUK7523-75A ...

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