BUK7611-55B NXP Semiconductors, BUK7611-55B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7611-55B

Manufacturer Part Number
BUK7611-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK7611-55B
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BUK7611-55B
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK7611-55B
N-channel TrenchMOS standard level FET
Rev. 3 — 31 January 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive systems
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 175 °C
mb
= 25 A;
Figure
= 25 °C;
Figure 2
Figure 3
11;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
9.9
Max Unit
55
75
157
11
V
A
W
mΩ

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BUK7611-55B Summary of contents

Page 1

... BUK7611-55B N-channel TrenchMOS standard level FET Rev. 3 — 31 January 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET Min ≤ sup = °C; ...

Page 3

... T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B Min Max - - [1] Figure [ ...

Page 4

... T mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 03nn44 = 10 μ 100 μ ...

Page 5

... BUK7611-55B Product data sheet Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET Min Typ - - - 50 03nn45 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B Min Typ Max Unit ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET Drain-source on-state resistance as a function of gate-source voltage; typical values (S) 30 ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nn42 Label (V) 7 120 180 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 −60 ...

Page 9

... 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nn36 1 ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. SOT404 05-02-11 06-03- ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK7611-55B separated from data sheet BUK75_76_7E11_55B-02. Product data All information provided in this document is subject to legal disclaimers. ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 January 2011 Document identifier: BUK7611-55B ...

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