BUK7613-75B NXP Semiconductors, BUK7613-75B Datasheet - Page 3

• Manufacturer Part Number: BUK7613-75B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7613-75B
Product data sheet
Fig 1.
Fig 3.
(A)
(A)
I
I
10
D
D
10
10
100
10
75
50
25
-1
3
2
1
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
Limit R
50
DSon
= V
DS
100
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
mb
10
03nm83
(°C)
Rev. 3 — 27 December 2011
200
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
10
2
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
50
BUK7613-75B
100
V
DS
(V)
150
© NXP B.V. 2011. All rights reserved.
T
003aag934
mb
03na19
(°C)
10
200
3
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