BUK7624-55A NXP Semiconductors, BUK7624-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7624-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 08029
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(A)
R DSon
Characteristics
180
160
140
120
100
(m )
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
80
60
40
20
60
50
40
30
20
10
0
0
0
0
p
= 300 s
5.5
20
2
6
40
V GS (V)=
6.5
…continued
4
60
7
12
80
6
14
8
100
V GS (V) =
16
8
V DS (V)
Conditions
I
Figure 15
I
V
18
120
S
S
GS
03nb71
03nb72
I D (A)
= 25 A; V
= 20 A; dI
10
= 10 V; V
10
140
11
8.5
20
9.5
6.5
5.5
4.5
7.5
Rev. 02 — 01 March 2001
GS
S
BUK7524-55A; BUK7624-55A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
R DSon
a
--------------------------- -
R
(m )
DSon 25 C
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
35
30
25
20
15
10
R
2
1
0
-60
DSon
6
D
Min
= 25 A
8
-20
TrenchMOS™ standard level FET
10
20
Typ
0.85
49
102
12
60
© Philips Electronics N.V. 2001. All rights reserved.
14
100
16
Max
1.2
140
T j ( o C)
18
V GS (V)
03aa28
03nb70
180
20
Unit
V
ns
nC
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