BUK7635-100A NXP Semiconductors, BUK7635-100A Datasheet - Page 3

• Manufacturer Part Number: BUK7635-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7635-100A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
03aa24
(°C)
Rev. 02 — 18 February 2011
200
Conditions
T
R
T
see
T
T
see
T
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 25 A; V
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
p
≤ 10 µs; T
sup
j
Fig 2.
≤ 175 °C
j(init)
GS
≤ 100 V; R
GS
P
Figure 2
(%)
= 10 V; see
= 25 °C; unclamped
der
120
= 10 V; see
80
40
mb
0
p
function of mounting base temperature
Normalized total power dissipation as a
0
= 25 °C
≤ 10 µs;
N-channel TrenchMOS standard level FET
GS
= 50 Ω;
Figure
Figure 1
50
1;
BUK7635-100A
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
Max
100
100
20
41
29
165
149
41
165
110
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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