BUK763R4-30B NXP Semiconductors, BUK763R4-30B Datasheet - Page 8

• Manufacturer Part Number: BUK763R4-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK763R4-30B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
GS(th)
(mΩ)
(V)
DSon
12
10
8
6
4
2
0
5
4
3
2
1
0
−60
junction temperature
of gate-source voltage; typical values
4
8
0
12
60
max
min
typ
120
16
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V
003aab188
T
GS
j
(°C)
03aa32
(V)
180
20
Rev. 2 — 21 April 2011
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
N-channel TrenchMOS standard level FET
0
2
BUK763R4-30B
min
60
typ
4
120
max
V
© NXP B.V. 2011. All rights reserved.
GS
T
j
(V)
( ° C)
03aa35
03aa27
180
6
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