BUK763R6-40C NXP Semiconductors, BUK763R6-40C Datasheet - Page 7
![Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology](/photos/41/50/415039/sot404_3d_sml.gif)
BUK763R6-40C
Manufacturer Part Number
BUK763R6-40C
Description
Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK763R6-40C.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK763R6-40C
Manufacturer:
NXP
Quantity:
147
NXP Semiconductors
BUK763R6-40C
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
D
120
(S)
g
90
60
30
fs
−1
−2
−3
−4
−5
−6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
0
15
2
min
30
typ
4
45
max
V
All information provided in this document is subject to legal disclaimers.
GS
003aac583
I
D
(V)
(A)
03aa35
60
6
Rev. 04 — 16 June 2010
Fig 6.
Fig 8.
(A)
(A)
I
I
180
150
120
D
150
D
120
90
60
30
90
60
30
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
20 10
N-channel TrenchMOS standard level FET
5.8
1.5
2
T
j
= 175 ° C
BUK763R6-40C
4
3
25 ° C
V
GS
4.5
6
© NXP B.V. 2010. All rights reserved.
(V) =
V
V
003aac584
GS
003aac818
DS
(V)
5.5
5.2
4.8
4.5
(V)
5
8
6
7 of 14