BUK7E04-40A NXP Semiconductors, BUK7E04-40A Datasheet - Page 4

• Manufacturer Part Number: BUK7E04-40A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E04-40A
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
150
100
50
0
function of mounting base temperature
25
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Capped at 75 A due to package
50
(A)
I
75
D
10
10
10
1
3
2
1
100
Capped at 75 A due to package
R
DSon
125
= V
150
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
175
T
mb
03ne93
(°C)
200
Rev. 03 — 15 June 2010
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
(V)
50
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
BUK7E04-40A
100
03ne68
102
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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