BUK9207-30B NXP Semiconductors, BUK9207-30B Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9207-30B

Manufacturer Part Number
BUK9207-30B
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V loads
Automotive systems
BUK9207-30B
N-channel TrenchMOS logic level FET
Rev. 03 — 16 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
V
T
see
j
mb
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C; see
Figure
Figure 10
= 25 °C; see
= 5 V; T
= 10 V; I
= 5 V; I
1; see
D
mb
j
D
≤ 185 °C
= 25 A;
= 25 A;
= 25 °C;
Figure
Figure 2
Figure 3
9;
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
4.4
5.9
Max Unit
30
75
167
5
7
V
A
W
mΩ
mΩ

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BUK9207-30B Summary of contents

Page 1

... BUK9207-30B N-channel TrenchMOS logic level FET Rev. 03 — 16 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 11 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET Min ≤ sup = °C; ...

Page 3

... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET Min Typ Max - - - [ ...

Page 4

... Fig 2. Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET 100 150 Normalized total power dissipation as a function of mounting base temperature = 10 μ 100 μs ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9207-30B Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET Min Typ - - - 71.4 03nk52 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET Min Typ Max 2.3 1.1 1 ...

Page 7

... V (V) GS Fig 6. 03nk93 ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET ( Forward transconductance as a function of drain current; typical values 2.5 GS(th) (V) 2 ...

Page 8

... V 3000 DD 2000 1000 (nC) G Fig 12. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET 2 a 1.5 1 0.5 0 − 150 factor as a function of junction temperature ...

Page 9

... BUK9207-30B Product data sheet 100 185 ° ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET 03nk90 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 10

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9207-30B v.3 20100616 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 16 June 2010 BUK9207-30B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 June 2010 Document identifier: BUK9207-30B ...

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