BUK9529-100B NXP Semiconductors, BUK9529-100B Datasheet - Page 6

• Manufacturer Part Number: BUK9529-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK9529-100B
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
g
(S)
D
fs
150
100
80
60
40
20
50
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Label is V
Parameter
source-drain voltage
reverse recovery time
recovered charge
2
GS
25
(V)
10
4
…continued
50
5
6
3.8
3.6
3.4
3.2
2.8
2.6
75
4
3
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
8
GS
I
V
= 25 A; V
= 20 A; dI
D
DS
03nm51
03nm48
(A)
Figure 15
= -10 V; V
(V)
Rev. 02 — 9 February 2011
100
10
GS
S
/dt = -100 A/µs;
DS
= 0 V; T
= 30 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
j
D
= 25 °C
40
35
30
25
20
−1
−2
−3
−4
−5
−6
of drain current; typical values
gate-source voltage
Drain-source on-state resistance as a function
Sub-threshold drain current as a function of
0
0
N-channel TrenchMOS logic level FET
min
5
1
BUK9529-100B
Min
-
-
-
typ
10
2
Typ
0.85
114
196
max
V
V
© NXP B.V. 2011. All rights reserved.
GS
GS
(V)
03nm50
(V)
Max
1.2
-
-
03ng53
15
3
Unit
V
ns
nC
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