BUK9620-100B NXP Semiconductors, BUK9620-100B Datasheet - Page 2

• Manufacturer Part Number: BUK9620-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9620-100B_2
Product data sheet
Pin
1
2
3
mb
Type number
BUK9620-100B
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Conditions
T
R
T
T
T
T
T
t
I
T
p
D
j
mb
mb
mb
mb
mb
j(init)
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 63 A; V
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
sup
j
≤ 175 °C
Rev. 02 — 6 May 2009
p
GS
≤ 100 V; R
≤ 10 µs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
Simplified outline
GS
Figure
= 50 Ω; V
Figure 1
(D2PAK)
SOT404
1; see
1
Figure 3
mb
GS
2
3
N-channel TrenchMOS logic level FET
= 5 V;
Figure 3
BUK9620-100B
Graphic symbol
Min
-
-
-15
-
-
-
-
-55
-55
-
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
100
100
15
63
45
253
203
175
175
63
253
222
D
Version
SOT404
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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