BUK98150-55A NXP Semiconductors, BUK98150-55A Datasheet - Page 8

• Manufacturer Part Number: BUK98150-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK98150-55A_4
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of
(A)
(A)
I
20
15
10
I
S
D
5
0
6
4
2
0
V
function of gate-source voltage; typical values
V
source-drain (diode forward) voltage; typical
values
0.0
0
DS
GS
= 25 V
= 0 V
0.4
1
T
T
j
j
= 150 C
= 150 C
0.8
2
T
T
1.2
j
j
3
= 25 C
= 25 C
V
003aab638
003aab636
V
GS
SD
(V)
(V)
1.6
4
Rev. 04 — 11 June 2007
Fig 14. Gate-source voltage as a function of gate
Fig 16. Single-pulse and repetitive avalanche rating;
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive.
10
10
V
(V)
(A)
I
10
AL
GS
-1
-2
5
4
3
2
1
0
1
10
T
charge; typical values
See
avalanche current as a function of avalanche
time
0
j
-3
= 25 C; I
Table note 1
N-channel TrenchMOS logic level FET
10
V
D
-2
DD
= 5 A
j
j
= 14 (V)
= 25 C.
= 125 C.
2
of
BUK98150-55A
Table 3
10
-1
Limiting values.
(3)
4
(1)
(2)
V
1
Q
DD
© NXP B.V. 2007. All rights reserved.
G
t
AL
= 44 (V)
003aab637
003aab639
(nC)
(ms)
10
6
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